BC,SBC846ALT1G Series 数据手册
数据手册规格
| 数据手册名称 | BC,SBC846ALT1G Series |
|---|---|
| 文件大小 | 233.672 千字节 |
| 文件类型 | |
| 页数 | 14 |
下载数据手册 BC,SBC846ALT1G Series |
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其他文档
BC847ALT1G 14 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi SBC848BLT1G
- Transistor Type: NPN
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 300mW
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 200@2mA,5V
- Collector Cut-Off Current (Icbo): 15nA
- Collector-Emitter Breakdown Voltage (Vceo): 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@5mA,100mA
- Package: SOT-23-3
- Manufacturer: onsemi
- Series: *
- Packaging: Cut Tape (CT)
- Part Status: Obsolete
- Base Part Number: BC848
- detail: Bipolar (BJT) Transistor
